06800885 is referenced by 92 patents and cites 1 patents.

An asymmetric double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a first fin formed on a substrate; a second fin formed on the substrate; a first gate formed adjacent first sides of the first and second fins, the first gate being doped with a first type of impurity; and a second gate formed between second sides of the first and second fins, the second gate being doped with a second type of impurity. An asymmetric all-around gate MOSFET includes multiple fins; a first gate structure doped with a first type of impurity and formed adjacent a first side of one of the fins; a second gate structure doped with the first type of impurity and formed adjacent a first side of another one of the fins; a third gate structure doped with a second type of impurity and formed between two of the fins; and a fourth gate structure formed at least partially beneath one or more of the fins.

Title
Asymmetrical double gate or all-around gate MOSFET devices and methods for making same
Application Number
10/385652
Publication Number
6800885 (B1)
Application Date
March 12, 2003
Publication Date
October 5, 2004
Inventor
Bin Yu
Cupertino
CA, US
Judy Xilin An
San Jose
CA, US
Agent
Harrity & Snyder
US
Assignee
Advance Micro Devices
CA, US
IPC
H01L 29/80
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