06797983 is referenced by 13 patents.

A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a higher dielectric layer and coupling ratio to sustain the higher operating voltage, such that the operating capacitance can be raised. Moreover, the HV CMOS transistor is combined with a mirror layer which has a higher reflective property, such that the LCOS back-plate structure has the better contrast and chrominance output in per area unit, when the operating voltage range is increased.

Title
Method of fabrication LCOS structure
Application Number
10/60460
Publication Number
6797983 (B2)
Application Date
January 30, 2002
Publication Date
September 28, 2004
Inventor
Sheng Hsiung Yang
Hsin-Chu
US
Ching Chun Huang
Taichung
US
Yuan Li Tsai
Taipei
US
Marcus Yang
Chang-Hua
US
Ralph Chen
Taichung
US
Agent
Merchant & Gould P C
US
Assignee
United Microelectronics
US
IPC
H01L 21/00
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