06777725 is referenced by 77 patents.

An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the semiconductor substrate surface of a peripheral controlling circuit for an array of memory cells allows to form the word line lithography on a perfect or almost perfect plane so that the word line formation results in a production with higher yield and, therefore, lower costs for the individual integrated memory circuit.

Title
NROM memory circuit with recessed bitline
Application Number
10/171643
Publication Number
6777725 (B2)
Application Date
June 14, 2002
Publication Date
August 17, 2004
Inventor
Herbert Palm
Hohenkirchen
US
Josef Willer
Riemerling
US
Agent
Ralph E Locher
US
Werner H Stemer
US
Laurence A Greenberg
US
Assignee
Ingentix & Co KG
US
IPC
H01L 29/768
View Original Source