06768665 is referenced by 53 patents.

Briefly, in accordance with an embodiment of the invention, an apparatus and method to provide refreshing of a memory cell of a phase change memory device is provided. The method includes determining whether a storage level of a phase change memory cell is within a predetermined margin from a resistance threshold. In response to the determination, the cell is selectively written. The apparatus includes a circuit to: determine whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold level; and in response to the determination, selectively write to the cell.

Title
Refreshing memory cells of a phase change material memory device
Application Number
10/212630
Publication Number
6768665 (B2)
Application Date
August 5, 2002
Publication Date
July 27, 2004
Inventor
Tyler A Lowrey
San Jose
CA, US
Ward D Parkinson
Boise
ID, US
Agent
Anthony M Martinez
US
Assignee
Intel Corporation
CA, US
IPC
G11C 13/00
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