06759321 is referenced by 11 patents.

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Title
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
Application Number
10/205526
Publication Number
6759321 (B2)
Application Date
July 25, 2002
Publication Date
July 6, 2004
Inventor
Katherine Lynn Saenger
Ossining
NY, US
Sampath Purushothaman
Yorktown Heights
NY, US
Vishnubhai Vitthalbhai Patel
Yorktown Heights
NY, US
Christopher Vincent Jahnes
Monsey
NY, US
Alfred Grill
White Plains
NY, US
Stephen Alan Cohen
Wappingers Falls
NY, US
Alessandro Callegari
Yorktown Heights
NY, US
Katherina Babich
Chappaqua
NY, US
Agent
Scully Scott Murphy & Presser
US
Agent
Robert M Trepp Esq
US
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/4763
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