06759282 is referenced by 116 patents.

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

Title
Method and structure for buried circuits and devices
Application Number
9/879530
Publication Number
6759282 (B2)
Application Date
June 12, 2001
Publication Date
July 6, 2004
Inventor
Kris V Srikrishnan
Wappingers Falls
NY, US
William T Devine
Ulster Park
NY, US
John E Campbell
Wappingers Falls
NY, US
Agent
McGinn & Gibb
US
Agent
Margaret A Pepper
US
Fred Gibb
US
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/00
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