A method for forming a resistor includes causing a semiconductor layer to have a first resistance, forming a first mask on the semiconductor layer, causing portions of the semiconductor layer left exposed by the first mask to have a second resistance that is lower than the first resistance, forming a second mask on the first mask and on the semiconductor layer, removing portions of the first mask and the semiconductor layer left exposed by the second mask, removing the second mask, and causing portions of the semiconductor layer exposed by the removing of the second mask to have a third resistance that is lower than the second resistance. Because a resistor formed by such a process can include an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value.

Title
Method for forming an interated resister having aligned body and contact
Application Number
10/126352
Publication Number
6737327 (B2)
Application Date
April 19, 2002
Publication Date
May 18, 2004
Inventor
Murty S Polavarapu
Vienna
VA, US
Jonathan Maimon
Manassas
VA, US
Agent
Graybeal Jackson Haley
US
Agent
Daniel J Long
US
Assignee
BAE Information and Electronic Systems Integration
VA, US
IPC
H01L 21/20
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