06730551 is referenced by 55 patents and cites 24 patents.

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.

Title
Formation of planar strained layers
Application Number
10/211126
Publication Number
6730551 (B2)
Application Date
August 2, 2002
Publication Date
May 4, 2004
Inventor
Eugene A Fitzgerald
Windham
NH, US
Christopher W Leitz
Nashua
NH, US
Minjoo L Lee
Cambridge
MA, US
Agent
Testa Hurwitz & Thibeault
US
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 21/337
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