06727522 is referenced by 2778 patents and cites 9 patents.

A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer

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formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source

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, a drain

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and a gate

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, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer

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, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate

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must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

Title
Transistor and semiconductor device
Application Number
9/850732
Publication Number
6727522 (B1)
Application Date
June 6, 2001
Publication Date
April 27, 2004
Inventor
Hideo Ohno
Sendai
US
Masashi Kawasaki
Sagamihara
US
Agent
Neifeld IP Law P C
US
Assignee
Japan Science and Technology Corporation
US
IPC
H01L 33/00
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