06716690 is referenced by 81 patents.

Multiple dopant implantations are performed on a FinFET device to thereby distribute the dopant in a substantially uniform manner along a vertical depth of the FinFET in the source/drain junction. Each of the multiple implantations may be performed at different tilt angles.

Title
Uniformly doped source/drain junction in a double-gate MOSFET
Application Number
10/385692
Publication Number
6716690 (B1)
Application Date
March 12, 2003
Publication Date
April 6, 2004
Inventor
Bin Yu
Cupertino
CA, US
Judy Xilin An
San Jose
CA, US
Haihong Wang
Fremont
CA, US
Agent
Harrity & Snyder
US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/336
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