06709982 is referenced by 157 patents.

A method for forming a group of structures in a semiconductor device includes forming a conductive layer on a substrate, where the conductive layer includes a conductive material, and forming an oxide layer over the conductive layer. The method further includes etching at least one opening in the oxide layer, filling the at least one opening with the conductive material, etching the conductive material to form spacers along sidewalls of the at least one opening, and removing the oxide layer and a portion of the conductive layer to form the group of structures.

Title
Double spacer FinFET formation
Application Number
10/303702
Publication Number
6709982 (B1)
Application Date
November 26, 2002
Publication Date
March 23, 2004
Inventor
Bin Yu
Cupertino
CA, US
Haihong Wang
Fremont
CA, US
Judy Xilin An
San Jose
CA, US
Matthew S Buynoski
Palo Alto
CA, US
Agent
Harrity & Snyder
US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/311
View Original Source