06706625 is referenced by 93 patents.

A method of fabricating a planarized barrier cap layer over a metal structure comprising the following steps. A substrate having an opening formed therein is provided. The substrate having an upper surface. A planarized metal structure is formed within the opening. The planarized metal structure being substantially planar with the upper surface of the substrate. A portion of the planarized metal structure is removed using a reverse-electrochemical plating process to recess the metal structure from the upper surface of the substrate. A barrier cap layer is formed over the substrate and the recessed metal structure. The excess of the barrier cap layer is removed from over the substrate by a planarization process to form the planarized barrier cap layer over the metal structure.

Title
Copper recess formation using chemical process for fabricating barrier cap for lines and vias
Application Number
10/313499
Publication Number
6706625 (B1)
Application Date
December 6, 2002
Publication Date
March 16, 2004
Inventor
Liu Wu Ping
Singapore
US
Liang Ch O Hsia
Singapore
US
John Sudijono
Singapore
US
Agent
Stephen G Stanton
US
Rosemary L S Pike
US
George O Saile
US
Assignee
Chartered Semiconductor Manufacturing
US
IPC
H01L 21/4763
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