06643188 is referenced by 302 patents.

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

Title
Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
Application Number
10/51372
Publication Number
6643188 (B2)
Application Date
January 22, 2002
Publication Date
November 4, 2003
Inventor
Jian Chen
San Jose
CA, US
Tomoharu Tanaka
Yokohama
US
Agent
Banner & Witcoff
US
Assignee
SanDisk Corporation
CA, US
Kabushiki Kaisha Toshiba
US
IPC
G11C 7/00
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