06639849 is referenced by 278 patents.

In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.

Title
Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell
Application Number
10/356495
Publication Number
6639849 (B2)
Application Date
February 3, 2003
Publication Date
October 28, 2003
Inventor
Minoru Yamashita
Kawasaki
US
Satoshi Takahashi
Kawasaki
US
Agent
Arent Fox Kintner Plotkin & Kahn PLLC
US
Assignee
Fujitsu
US
IPC
G11C 16/04
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