06639244 is referenced by 149 patents and cites 8 patents.

A semiconductor device having high TFT characteristics is realized. In a pixel matrix circuit of an AM-LCD, a lower electrode of a storage capacitor is made to include an element in group

15

and a catalytic element used for crystallization, so that its resistance is reduced. Further, a dielectric of the storage capacitor is made thin, so that capacity can be secured without increasing an area for formation of the capacitance. Thus, it becomes possible to secure sufficient storage capacitor even in the AM-LCD having a size of 1 inch or less in diagonal without lowering an opening ratio.

Title
Semiconductor device and method of fabricating the same
Application Number
9/479842
Publication Number
6639244 (B1)
Application Date
January 10, 2000
Publication Date
October 28, 2003
Inventor
Takeshi Fukunaga
Kanagawa
US
Hiroshi Shibata
Kanagawa
US
Jun Koyama
Kanagawa
US
Shunpei Yamazaki
Tokyo
US
Agent
Robinson Intellectual Property Law Office P C
US
Agent
Eric J Robinson
US
Assignee
Semiconductor Energy Laboratory
US
IPC
H01L 29/786
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