06638774 is referenced by 10 patents and cites 1 patents.

A resistive memory element (

144

), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (

132

) is disposed within the first metal layer (

136

) of the memory element (

144

). The thin oxide layer (

132

) comprises an oxygen mono-layer. The roughness of subsequently-formed layers (

134/118/116

) is reduced, and magnetic capabilities of the resistive memory element (

144

) are enhanced by the use of the thin oxide layer (

132

) within the first metal layer (

136

).

Title
Method of making resistive memory elements with reduced roughness
Application Number
10/47456
Publication Number
6638774 (B2)
Application Date
January 15, 2002
Publication Date
October 28, 2003
Inventor
Wolfgang Raberg
Fishkill
NY, US
Agent
Slater & Matsil L
US
Assignee
Infineon Technologies
US
IPC
H01L 21/00
View Original Source