06596654 is referenced by 261 patents.

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Title
Gap fill for high aspect ratio structures
Application Number
9/996619
Publication Number
6596654 (B1)
Application Date
November 28, 2001
Publication Date
July 22, 2003
Inventor
Vikram Singh
Fremont
CA, US
George D Papasoulitotis
Cupertino
CA, US
Vishal Gauri
San Jose
CA, US
Bart van Schravendijk
Sunnyvale
CA, US
Weijie Zhang
San Jose
CA, US
Md Sazzadur Rahman
San Jose
CA, US
Atiye Bayman
Palo Alto
CA, US
Agent
Beyer Weaver & Thomas
US
Assignee
Novellus Systems
CA, US
IPC
H01L 21/31
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