06578190 is referenced by 217 patents.

A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the pattern, determining simulated achievable dimensional bounds of the pattern, comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern, and determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern. In its preferred embodiment, the feature is an integrated circuit to be lithographically produced on a semiconductor substrate.

Title
Process window based optical proximity correction of lithographic images
Application Number
9/759013
Publication Number
6578190 (B2)
Application Date
January 11, 2001
Publication Date
June 10, 2003
Inventor
Alfred K Wong
Pokfulam
US
Lars W Liebmann
Poughquag
NY, US
Mark A Lavin
Katonah
NY, US
Richard A Ferguson
Pleasant Valley
NY, US
Agent
DeLio & Peterson
US
Agent
Tiffany L Townsend
US
Peter W Peterson
US
Assignee
International Business Machines Corporation
NY, US
IPC
G06F 17/50
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