06576345 is referenced by 47 patents.

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.

Title
Dielectric films with low dielectric constants
Application Number
9/727796
Publication Number
6576345 (B1)
Application Date
November 30, 2000
Publication Date
June 10, 2003
Inventor
Bunsen Nie
42706 Hamilton Way, Fremont
CA, US
Michelle T Schulberg
445 College Ave., Palo Alto
CA, US
Jen Shu
19393 Dehavilland Dr., Saratoga
CA, US
Ravi Kumar Laxman
6270 Skywalker Dr., San Jose
CA, US
Patrick A Van Cleemput
376 Flora Vista Ave., Sunnyvale
CA, US
Agent
Beyer Weaver & Thomas
US
IPC
B32B 25/20
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