06573534 is referenced by 125 patents and cites 17 patents.

A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.

Title
Silicon carbide semiconductor device
Application Number
9/265582
Publication Number
6573534 (B1)
Application Date
March 10, 1999
Publication Date
June 3, 2003
Inventor
Jun Kojima
Oobu
US
Eiichi Okuno
Gifu
US
Kunihiko Hara
Aichi
US
Mitsuhiro Kataoka
Kariya
US
Shoichi Onda
Toyokawa
US
Tsuyoshi Yamamoto
Kariya
US
Rajesh Kumar
Kariya
US
Agent
Harness Dickey & Pierce
US
Assignee
Denso Corporation
US
IPC
H01L 31/0312
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