06548878 is referenced by 5 patents and cites 2 patents.

A method is shown for producing a distributed PN photodiode having a first active region of the photodiode that can be made arbitrarily thin. A fabrication substrate is doped to have a first conductivity type in order to form the first active region of the photodiode. A layer can also be formed upon the first surface of the fabrication substrate or a first surface of a handling wafer, where the layer can be an oxide layer, where a thickness of the oxide layer can be controlled to form a dielectric refractive reflector, a reflective layer, or a conductive layer. The first surface of the handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the first active region. A plurality of second active regions of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate. A contact having a plurality of connective traces is formed on the second surface of the fabrication substrate, where the connective traces are electrically coupled to the second active regions.

Title
Method for producing a thin distributed photodiode structure
Application Number
9/448861
Publication Number
6548878 (B1)
Application Date
November 23, 1999
Publication Date
April 15, 2003
Inventor
Pierre Irissou
Sunnyvale
CA, US
Wayne T Holcombe
Palo Alto
CA, US
Jean Luc Nauleau
Los Gatos
CA, US
Agent
Gardner Carton & Douglas
US
Agent
Vernon W Francissen
US
Assignee
Integration Associates
CA, US
IPC
H01L 27/14
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