06548361 is referenced by 46 patents.
A MOSFET formed in semiconductor-on-insulator format. The MOSFET includes a source and a drain formed in a layer of semiconductor material, each having an extension region and a deep doped region. A body is formed between the source and the drain and includes a first damaged region adjacent the extension of the source and a second damaged region adjacent the extension of the drain. The first and second damaged regions include defects caused by amorphization of the layer of semiconductor material. A gate electrode, the source, the drain and the body are operatively arranged to form a transistor.