06548361 is referenced by 46 patents.

A MOSFET formed in semiconductor-on-insulator format. The MOSFET includes a source and a drain formed in a layer of semiconductor material, each having an extension region and a deep doped region. A body is formed between the source and the drain and includes a first damaged region adjacent the extension of the source and a second damaged region adjacent the extension of the drain. The first and second damaged regions include defects caused by amorphization of the layer of semiconductor material. A gate electrode, the source, the drain and the body are operatively arranged to form a transistor.

Title
SOI MOSFET and method of fabrication
Application Number
10/145915
Publication Number
6548361 (B1)
Application Date
May 15, 2002
Publication Date
April 15, 2003
Inventor
Srinath Krishnan
Campbell
CA, US
Dong Hyuk Ju
Cupertino
CA, US
William G En
Milpitas
CA, US
Agent
Renner Otto Boiselle & Sklar
US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/336
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