06545903 is referenced by 240 patents.

Memory devices are disclosed for storage and retrieval of information, wherein resistive plugs are provided above and below a phase change material to form a memory cell. The plugs may be formed by implanting regions in high resistivity material above and below a phase change material layer to lower the resistivity in the implanted regions.

Title
Self-aligned resistive plugs for forming memory cell with phase change material
Application Number
10/23392
Publication Number
6545903 (B1)
Application Date
December 17, 2001
Publication Date
April 8, 2003
Inventor
Zhiqiang Wu
Plano
TX, US
Agent
Frederick J Telecky Jr
US
W James Brady III
US
Jacqueline J Garner
US
Assignee
Texas Instruments Incorporated
TX, US
IPC
G11C 11/00
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