Semiconductor device and manufacturing method thereof United States Patent 06534826

06534826 is referenced by 126 patents and cites 3 patents.

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.

An LDD region

207

provided in an n-channel TFT

302

forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions

217-220

provided in an n-channel TFT (pixel TFT)

304

forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

Title
Semiconductor device and manufacturing method thereof
Application Number
9/559185
Publication Number
6534826 (B2)
Application Date
April 27, 2000
Publication Date
March 18, 2003
Inventor
Shunpei Yamazaki
Tokyo
US
Agent
Robinson Intellectual Property Law Office P C
US
Agent
Eric J Robinson
US
Assignee
Semiconductor Energy Laboratory
US
IPC
H01L 29/76
View Original Source

Citations: 126 (view full list)

  1. Shunpei Yamazaki, Hideomi Suzawa: Dry etching apparatus, etching method, and method of forming a wiring. Semiconductor Energy Laboratory, Fish & Richardson P C, August 16, 2005: US06930047 (100 worldwide citation)
  2. Shunpei Yamazaki, Satoshi Murakami, Jun Koyama, Yukio Tanaka, Hidehito Kitakado, Hideto Ohnuma: Semiconductor device and fabrication method thereof. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 22, 2005: US06967129 (54 worldwide citation)
  3. Hideto Ohnuma, Ichiro Uehara: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Fish & Richardson P C, May 29, 2007: US07223643 (48 worldwide citation)
  4. Shunpei Yamazaki, Satoshi Murakami, Jun Koyama, Yukio Tanaka, Hidehito Kitakado, Hideto Ohnumo: Display including casing and display unit. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 28, 2008: US07442991 (42 worldwide citation)
  5. Shunpei Yamazaki, Satoshi Murakami, Jun Koyama, Yukio Tanaka, Hidehito Kitakado, Hideto Ohnumo: Semiconductor device and fabrication method thereof. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, April 29, 2008: US07365393 (41 worldwide citation)
  6. Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma: Electroluminescence display device and method of manufacturing the same. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, December 12, 2006: US07147530 (38 worldwide citation)
  7. Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki: Method of fabricating a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, July 19, 2005: US06919282 (33 worldwide citation)
  8. Takashi Hamada, Satoshi Murakami, Shunpei Yamazaki, Osamu Nakamura, Masayuki Kajiwara, Junichi Koezuka, Toru Takayama: Semiconductor device and method of manufacturing the same. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, July 5, 2005: US06913956 (31 worldwide citation)
  9. Shunpei Yamazaki, Hideto Ohnuma, Koji Dairiki, Toru Mitsuki, Toru Takayama, Kengo Akimoto: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office PC, May 30, 2006: US07052943 (30 worldwide citation)
  10. Shunpei Yamazaki: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, March 21, 2006: US07015141 (30 worldwide citation)

References: 3

  1. May, 1995: JP7130652
  2. September, 1998: JP10247735
  3. October, 1998: JP10270363