06534826 is referenced by 126 patents and cites 3 patents.

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.

An LDD region

207

provided in an n-channel TFT

302

forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions

217-220

provided in an n-channel TFT (pixel TFT)

304

forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

Title
Semiconductor device and manufacturing method thereof
Application Number
9/559185
Publication Number
6534826 (B2)
Application Date
April 27, 2000
Publication Date
March 18, 2003
Inventor
Shunpei Yamazaki
Tokyo
US
Agent
Robinson Intellectual Property Law Office P C
US
Agent
Eric J Robinson
US
Assignee
Semiconductor Energy Laboratory
US
IPC
H01L 29/76
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