06534781 is referenced by 383 patents.

The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single film is deposited but two isolated lower electrodes are formed therefrom. Additionally a diode stack is formed that communicates to the lower electrode.

Title
Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
Application Number
9/749126
Publication Number
6534781 (B2)
Application Date
December 26, 2000
Publication Date
March 18, 2003
Inventor
Charles Dennison
San Jose
CA, US
Agent
Trop Pruner & Hu P C
US
Assignee
Ovonyx
ID, US
IPC
H01L 47/00
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