06534380 is referenced by 206 patents and cites 8 patents.

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.

Title
Semiconductor substrate and method of manufacturing the same
Application Number
9/116956
Publication Number
6534380 (B1)
Application Date
July 17, 1998
Publication Date
March 18, 2003
Inventor
Toshifumi Izumi
Chiryu
US
Akitoshi Yamanaka
Hekinan
US
Tadao Ooka
Aichi-gun
US
Kunihiro Onoda
Nagoya
US
Masaki Matsui
Nagoya
US
Hisayoshi Ohshima
Obu
US
Shoichi Yamauchi
Obu
US
Agent
Harness Dickey & Pierce
US
Assignee
Denso Corporation
US
IPC
H01L 21/30
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