06514805 is referenced by 165 patents.

A method comprising forming a first trench in a substrate, and forming a second trench in the substrate, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench. An apparatus comprising a matrix of cells in a substrate formed by a plurality of first trenches and a plurality of second trenches, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench; and an electrically accessible storage device coupled to respective ones of the matrix of cells.

Title
Trench sidewall profile for device isolation
Application Number
9/896532
Publication Number
6514805 (B2)
Application Date
June 30, 2001
Publication Date
February 4, 2003
Inventor
Ming Jin
San Jose
CA, US
Erman Bengu
San Jose
CA, US
Daniel Xu
Mountain View
CA, US
Agent
Blakely Sokoloff Taylor & Zafman
US
Assignee
Intel Corporation
CA, US
IPC
H01L 21/00
View Original Source