06512241 is referenced by 402 patents.

A phase change memory with a very limited area of contact between the lower electrode and the phase change material may be formed by defining a closed geometric structure for the lower electrode. The lower electrode may then be covered. The covering may then be opened in a very narrow strip extending across the closed geometric shape using phase shift masking. A phase change material may be formed in the opening. Because the opening effectively bisects the closed geometric structure of the lower electrode, two very small contact areas may be created for contacting the lower electrode to the phase change material.

Title
Phase change material memory device
Application Number
10/39021
Publication Number
6512241 (B1)
Application Date
December 31, 2001
Publication Date
January 28, 2003
Inventor
Stefan K Lai
Woodwide
CA, US
Agent
Trop Pruner & Hu P C
US
Assignee
Intel Corporation
CA, US
IPC
H01L 29/06
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