06498114 is referenced by 280 patents and cites 109 patents.

A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.

Title
Method for forming a patterned semiconductor film
Application Number
9/651710
Publication Number
6498114 (B1)
Application Date
August 31, 2000
Publication Date
December 24, 2002
Inventor
Peter Kazlas
Sudbury
MA, US
Gregg Duthaler
Brookline
MA, US
Jianna Wang
Waltham
MA, US
Paul S Drzaic
Lexington
MA, US
Karl Amundson
Cambridge
MA, US
Agent
Testa Hurwitz & Thibeault
US
Assignee
E Ink Corporation
MA, US
IPC
H01L 21/31
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