06468874 is referenced by 3 patents and cites 1 patents.

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a BST dielectric film, the present invention forms a contact layer and a diffusion prevention film within a first contact hole for plug in a plug shape, forms a second contact hole using an oxide film, deposits an underlying electrode material and then removes the oxide film to form an underlying electrode. Therefore, the present invention has outstanding advantages of increasing the effective surface area of an underlying electrode since a process of etching the underlying electrode which could not be etched easily can be omitted, and preventing diffusion of oxygen upon formation of a dielectric thin film since a direct contact of a metal/oxygen diffusion prevention film and the dielectric film can be avoided. As a result, the present invention can improve an electrical characteristic of a capacitor.

Title
Method of manufacturing a capacitor in a semiconductor device
Application Number
9/722357
Publication Number
6468874 (B1)
Application Date
November 28, 2000
Publication Date
October 22, 2002
Inventor
Kweon Hong
Sungnam-Shi
US
Yong Sik Yu
Sungnam-Shi
US
Agent
Finnegan Henderson Farabow Garrett & Dunner L
US
Assignee
Hyundai Electronic
US
IPC
H01L 21/20
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