06428859 is referenced by 234 patents.

The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Title
Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
Application Number
9/812285
Publication Number
6428859 (B1)
Application Date
March 19, 2001
Publication Date
August 6, 2002
Inventor
Karl F Leeser
Sunnyvale
CA, US
Tony P Chiang
Santa Clara
CA, US
Agent
Carr & Ferrell
US
Agent
V Randall Gard
US
Bradley W Scheer
US
Assignee
Angstron Systems
CA, US
IPC
B01J 19/08
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