06395150 is referenced by 218 patents.

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

Title
Very high aspect ratio gapfill using HDP
Application Number
9/53554
Publication Number
6395150 (B1)
Application Date
April 1, 1998
Publication Date
May 28, 2002
Inventor
William J King
Nashua
NH, US
Bart van Schravendijk
Sunnyvale
CA, US
Mark A Logan
Pleasant Valley
NY, US
George D Papasouliotis
Fishkill
NY, US
Patrick A Van Cleemput
Sunnyvale
CA, US
Agent
Skjerven Morrill MacPherson
US
Agent
Tom Chen
US
Assignee
Novellus Systems
CA, US
IPC
C23C 14/00
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