06340628 is referenced by 92 patents.

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO

2

with O

2

or CO

2

with C

x

H

(2x+1)

OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.

Title
Method to deposit SiOCH films with dielectric constant below 3.0
Application Number
9/735318
Publication Number
6340628 (B1)
Application Date
December 12, 2000
Publication Date
January 22, 2002
Inventor
Bunsen Nie
Fremont
CA, US
Michelle T Schulberg
Palo Alto
CA, US
Jen Shu
Saratoga
CA, US
Ravi Kumar Laxman
San Jose
CA, US
Patrick A Van Cleemput
Sunnyvale
CA, US
Agent
Skjerven Morrill MacPherson
US
Agent
Tom Chen
US
Assignee
Novellus Systems
CA, US
IPC
H01L 21/3205
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