06313501 is referenced by 4 patents and cites 5 patents.

Nonvolatile memory, cell array thereof, and method for sensing a data therefrom, the method including the steps of: selecting a flash memory cell having a first floating gate and a second floating gate, a first control gate and a second control gate, and a drain and a source; flowing a current through a first channel under the first floating gate and detecting a current flow through a second channel under the second floating gate, thereby sensing a color state of the second floating gate; flowing a current through the second channel and conducting level writings on the first floating gate, thereby forming different threshold voltages; measuring a cell current of the first channel under the first floating gate; comparing the measured cell current to a reference current, thereby sensing a level state of the first floating gate; and sensing information bits stored in the flash memory cell according to a color state of the second floating gate and a level state of the first floating gate.

Title
Nonvolatile memory, cell array thereof, and method for sensing data therefrom
Application Number
9/679807
Publication Number
6313501 (B1)
Application Date
October 5, 2000
Publication Date
November 6, 2001
Inventor
Wook Hyun Kwon
Chungcheongbuk-do
US
Agent
Morgan Lewis & Bockius
US
Assignee
Hyundai Electronic
US
IPC
H01L 29/788
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