06290804 is referenced by 80 patents and cites 154 patents.

A technique for forming a film of material (

12

) from a donor substrate (

10

). The technique has a step of introducing energetic particles (

22

) in a selected manner through a surface of a donor substrate (

10

) to form a pattern at a selected depth (

20

) underneath the surface. The particles have a concentration sufficiently high to define a donor substrate material (

12

) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (

10

) at the selected depth (

20

), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Title
Controlled cleavage process using patterning
Application Number
9/26793
Publication Number
6290804 (B1)
Application Date
February 20, 1998
Publication Date
September 18, 2001
Inventor
Nathan W Cheung
Albany
CA, US
Francois J Henley
Los Gatos
CA, US
Agent
Townsends and Townsend and Crew
US
Assignee
Silicon Genesis Corporation
CA, US
IPC
B32B 31/14
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