A method for testing semiconductor packages using oxide penetrating test contacts is provided. The test contacts are attached to a burn-in board and include a base metal formed in compliant shape. In addition, the test contacts include a conductive layer having an abrasive grain material embedded therein. The conductive layer and abrasive grain material are adapted to penetrate an oxide coating on the package leads to form a low resistance electrical contact. The abrasive grain material can be formed of diamond, synthetic diamond, diamond like carbon or cubic boron nitride. The conductive layer and abrasive grain material can be formed on the base metal using a process such as electro-deposition, chemical deposition, powder metallurgy or vapor deposition.