06274905 is referenced by 133 patents and cites 12 patents.

A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.

Title
Trench structure substantially filled with high-conductivity material
Application Number
9/343330
Publication Number
6274905 (B1)
Application Date
June 30, 1999
Publication Date
August 14, 2001
Inventor
Brian S Mo
Stanford
CA, US
Agent
Townsend and Townsend and Crew
US
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 29/76
View Original Source