06255731 is referenced by 79 patents and cites 21 patents.

A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

Title
SOI bonding structure
Application Number
9/123364
Publication Number
6255731 (B1)
Application Date
July 28, 1998
Publication Date
July 3, 2001
Inventor
Takahisa Nitta
Fuchu
US
Toshikuni Shinohara
Sendai
US
Takeo Ushiki
Sendai
US
Nobuyoshi Tanaka
Tokyo
US
Tadahiro Ohmi
1-17-301, Komegafukuro 2- chome, Aoba-ku, Sendai-shi, Miyagi-ken
US
Agent
Fitzpatrick Cella Harper & Scinto
US
Assignee
Ultraclean Technology Research Institute
US
Tadahiro Ohmi
US
Canon Kabushiki Kaisha
US
IPC
H01L 23/48
View Original Source