06252248 is referenced by 216 patents and cites 9 patents.

A gate electrode (

2

), a gate insulating film (

3

), and an active layer (

4

) made of a poly silicon film and having a source (

5

), a channel (

7

), and a drain (

6

) are formed on an insulating substrate (

1

) and an interlayer insulating film (

9

) is formed over the whole of the gate insulating film (

3

), the active layer (

4

), and a stopper insulating film (

8

). A drain electrode (

10

) is formed by filling a contact hole made in the interlayer insulating film (

9

), the position of which corresponds to the drain (

6

), with a metal, such as Al. Simultaneously with the drain electrode (

10

), a conductive layer (

11

) is formed on the interlayer insulating film (

9

) over the channel (

7

). The conductive layer (

11

) is connected to gate signal line G on the insulating substrate (

1

) via a contact hole (

15

) made in the gate insulating film (

3

) and the interlayer insulating film (

9

). The width of the conductive layer (

11

) along the length of the channel (

7

) is narrower than the actual length of the channel (

7

) and narrower than the width along the channel length of the gate electrode (

2

). The conductive layer (

11

) can therefore shield the channel (

7

). As a result, even if impurities or the like become attached to the surface of the interlayer insulating film (

9

), the occurrence of a back channel, for example, is reliably prevented.

Title
Thin film transistor and display
Application Number
9/326288
Publication Number
6252248 (B1)
Application Date
June 7, 1999
Publication Date
June 26, 2001
Inventor
Tsutomu Yamada
Motosu-gun
US
Norio Tabuchi
Ichinomiya
US
Yasuo Segawa
Gifu
US
Keiichi Sano
Anpachi-gun
US
Agent
Cantor Colburn
US
Assignee
Sanyo Electric
US
IPC
H01L 29/04
View Original Source