06242289 is referenced by 29 patents and cites 18 patents.

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

Title
Method for producing semiconductor device
Application Number
9/292016
Publication Number
6242289 (B1)
Application Date
April 15, 1999
Publication Date
June 5, 2001
Inventor
Satoshi Teramoto
Kanagawa
US
Naoto Kusumoto
Kanagawa
US
Shunpei Yamazaki
Tokyo
US
Setsuo Nakajima
Kanagawa
US
Agent
Nixon Peabody
US
Agent
Eric J Robinson
US
Assignee
Semiconductor Energy Laboratories
US
IPC
H01L 21/00
View Original Source