06232138 is referenced by 55 patents and cites 2 patents.

In

x

Ga

1−x

As structures with compositionally graded buffers grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs; and epitaxially growing a relaxed graded layer of In

x

Ga

1−x

As at a temperature ranging upwards from about 600° C.

Title
Relaxed InxGa(1-x)as buffers
Application Number
9/198960
Publication Number
6232138 (B1)
Application Date
November 24, 1998
Publication Date
May 15, 2001
Inventor
Mayank T Bulsara
Cambridge
MA, US
Eugene A Fitzgerald
Windham
NH, US
Agent
Samuels Gauthier & Stevens
US
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 21/00
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