06191007 is referenced by 292 patents and cites 23 patents.

Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.

Title
Method for manufacturing a semiconductor substrate
Application Number
9/66971
Publication Number
6191007 (B1)
Application Date
April 28, 1998
Publication Date
February 20, 2001
Inventor
Jun Sakakibara
Anjo
US
Takeshi Enya
Nagoya
US
Takanari Sasaya
Kariya
US
Akiyoshi Asai
Aichi-gun
US
Kunihiro Onoda
Nagoya
US
Hisayoshi Ohshima
Obu
US
Shoichi Yamauchi
Obu
US
Masaki Matsui
Nagoya
US
Agent
Pillsbury Madison & Sutro
US
Assignee
Denso Corporation
US
IPC
H01L 21/331
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