06162705 is referenced by 76 patents and cites 176 patents.

A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.

Title
Controlled cleavage process and resulting device using beta annealing
Application Number
9/26118
Publication Number
6162705
Application Date
February 19, 1998
Publication Date
December 19, 2000
Inventor
Nathan W Cheung
Albany
CA, US
Francois J Henley
Los Gatos
CA, US
Agent
Townsend and Townsend and Crew
Assignee
Silicon Genesis Corporation
CA, US
IPC
H01L 21/76
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