06159824 is referenced by 93 patents and cites 123 patents.

A method for fabricating silicon-on-silicon substrates. A donor wafer (40) is attached to a target wafer (46) using a low-temperature bonding process. The low-temperature bonding process maintains the integrity of a layer of microbubbles (41). Subsequent processing separates a thin film (45) of material from the donor wafer. A high-temperature annealing process finishes the bonding process of the thin film to the target wafer to produce a hybrid wafer suitable for fabricating integrated circuit devices or other devices.

Title
Silicon-on-silicon wafer bonding process using a thin film blister-separation method
Application Number
9/25967
Publication Number
6159824
Application Date
February 19, 1998
Publication Date
December 12, 2000
Inventor
Nathan W Cheung
Albany
CA, US
Francois J Henley
Los Gatos
CA, US
Agent
Townsend and Townsend and Crew
Assignee
Silicon Genesis Corporation
CA, US
IPC
H01L 21/76
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