06147365 is referenced by 11 patents and cites 9 patents.

An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.

Title
Optoelectronic semiconductor component
Application Number
PCTDE9800263
Publication Number
6147365
Application Date
August 2, 1999
Publication Date
November 14, 2000
Inventor
Gottfried Landwehr
Wurzburg
DE
Gunter Reuscher
Wurzburg
DE
Thierry Baron
Gerbrunn
DE
Markus Keim
Wurzburg
DE
Hans Jurgen Lugauer
Gerbrunn
DE
Thomas Litz
Wurzburg
DE
Frank Fischer
Wurzburg
DE
Agent
Werner H Stemer
Laurence A Greenberg
Herbert L Lerner
Assignee
Infineon Technologies
DE
IPC
H01L 31/0256
H01L 29/22
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