06100184 is referenced by 102 patents and cites 6 patents.

A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.di-elect cons.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.di-elect cons. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

Title
Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
Application Number
8/914995
Publication Number
6100184
Application Date
August 20, 1997
Publication Date
August 8, 2000
Inventor
Peter M Zeitzoff
Austin
TX, US
Thomas E Seidel
Sunnyvale
CA, US
Ronald S Horwath
Santa Clara
CA, US
Prahalad K Vasudev
Austin
TX, US
Bin Zhao
Irvine
CA, US
Assignee
Lucent Technologies
NJ, US
Sematech
TX, US
IPC
H01L 21/4763
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