06066516 is referenced by 82 patents and cites 12 patents.

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perform a second annealing process consisting of rapid thermal annealing. This enables the formation of a high quality crystalline semiconductor film with high throughput but without subjecting the substrate to undue thermal stress. When this invention is applied to thin film transistors, good transistors having high performance are easily fabricated. When this invention is applied to solar cells, energy conversion efficiency is increased.

Title
Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and method for fabricating solar cells and active matrix liquid crystal devices
Application Number
8/776545
Publication Number
6066516
Application Date
January 31, 1997
Publication Date
May 23, 2000
Inventor
Mitsutoshi Miyasaka
Nagano
JP
Agent
Oliff & Berridge
Assignee
Seiko Epson Corporation
JP
IPC
H01L 21/00
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