06057212 is referenced by 138 patents and cites 4 patents.

A method of forming a semiconductor structure, includes steps of growing an oxide layer on a substrate to form a first wafer, separately forming a metal film on an oxidized substrate to form a second wafer, attaching the first and second wafers, performing a heat cycle for the first and second wafers to form a bond between the first and second wafers, and detaching a portion of the first wafer from the second wafer. Thus, a device, such as a back-plane for a semiconductor device, formed by the method includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.

Title
Method for making bonded metal back-plane substrates
Application Number
9/72294
Publication Number
6057212
Application Date
May 4, 1998
Publication Date
May 2, 2000
Inventor
Sandip Tiwari
Ossining
NY, US
Paul Michael Solomon
Yorktown Heights
NY, US
Erin Catherine Jones
Yorktown Heights
NY, US
Christopher Peter D Emic
Ossining
NY, US
Kevin Kok Chan
Staten Island
NY, US
Agent
McGinn & Gibb P C
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/46
H01L 21/30
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