06051851 is referenced by 62 patents and cites 15 patents.

Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is formed of a metal silicide-reacting with the amorphous silicon, and in that a film-formed surface is produced without being exposed to an oxide atmosphere, between a step of forming the amorphus silicon and a step of forming the metal.

Title
Semiconductor devices utilizing silicide reaction
Application Number
429043
Publication Number
6051851
Application Date
August 26, 1997
Publication Date
April 18, 2000
Inventor
Takeo Yamashita
Oume
JP
Hiroshi Suzuki
Sendai
JP
Yoshio Nakamura
Atsugi
JP
Mamoru Miyawaki
Isehara
JP
Tadahiro Ohmi
Sendai
JP
Agent
Fitzpatrick Cella Harper & Scinto
Assignee
Tadahiro Ohmi
JP
Canon Kabushiki Kaisha
JP
IPC
H01L 31/109
H01L 31/072
H01L 31/0336
H01L 31/0328
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