06039803 is referenced by 61 patents and cites 16 patents.

A method of processing semiconductor materials, including providing a monocrystalline silicon substrate having a (001) crystallographic surface orientation; off-cutting the substrate to an orientation from about 2.degree. to about 6.degree. offset towards the [110] direction; and epitaxially growing a relaxed graded layer of a crystalline GeSi on the substrate. A semiconductor structure including a monocrystalline silicon substrate having a (001) crystallographic surface orientation, the substrate being off-cut to an orientation from about 2.degree. to about 6.degree. offset towards the [110] direction; and a relaxed graded layer of a crystalline GeSi which is epitaxially grown on the substrate.

Title
Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
Application Number
8/806741
Publication Number
6039803
Application Date
February 27, 1997
Publication Date
March 21, 2000
Inventor
Srikanth B Samavedam
Cambridge
MA, US
Eugene A Fitzgerald
Windham
NH, US
Agent
Samuels Gauthier & Stevens
Assignee
Massachusetts Institute of Technology
MA, US
IPC
C30B 25/18
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